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Modeling The Bipolar Transistor
by Ian Getreu, Originally Published by Elsevier Science
ISBN 13: 978-0-04-4441722-2, hardback, 284 pp, $99.95 August 1978
Revised version published 25 October 2009, Publisher Ian Getreu, 286 pp,
Size US Trade Binding Coil Bound paperback, $39.95
Ian Getreu taught graduate-level semiconductor electronics at Tektronix and worked in the Tek IC group, doing BJT modeling. Coming to Tek from Berkeley, Ian is an extraordinarily clear presenter of BJT concepts, both in person and in his book, which originated as notes at Tektronix. As described on his self-publishing webpage, the book describes the bipolar transistor model and parameter measurement techniques for the SPICE circuit simulator. Originally published by Tektronix in 1974, this is a slightly modified revision republished in 2009 by the original author.
Anyone serious about understanding the active element of electronic circuits nowadays will want a copy of this book. When Ian finishes modeling the BJT, there is little to no anomalous BJT behavior left to take into account. The book offers a compendium of BJT effects, such as base-width modulation, crowding, the “Late effect”, high- and low-level injection, the Kirk effect, distributed base capacitance, emitter ohmic resistance, saturated collector resistance, and more. Ian made some prospective improvements to the original book and those outside Tektronix can also continue to access the material that helped many of us who were doing instrument design at Tek in the 1970s.