greenpowerZONE Products for the week of September 17, 2007
Infineon Corp. Says…
The new OptiMOS 3 30V MOSFET series is the ideal way to meet the growing power demands in application areas such as information technology, telecom and industrial: Higher power densities and higher system efficiencies can be achieved due to a combination of lowest available on-state resistance in comparable packages and lowest gate drive requirements. The OptiMOS 3 30V MOSFETs are switching faster than competitor products and are ideal for high efficient DC/DC converters operating at high frequencies.
30V OptiMOS 3 highlights:
- Up to 40% improved FOMsw (RDS(on) x Qgd) allows higher possible switching frequencies to reduce the size of passive components
- World-leading lowest gate charges reduce power losses by up to 10% and lead to lowered gate drive requirements and driver temperatures
- Best-in-class on-state resistance in a given packages: 1.6mOhm in SuperSO8 and 3.5mOhm in ShrinkSuperSO8 (S3O8)
- Improved thermal coefficient for low RDS(on) at high operating temperatures
Offering optimum performance in low-voltage power conversion applications, the new OptiMOS 3 30V MOSFET sets a new standard for high power density and energy efficiency.
EN-Genius Says…
Despite the release attempts to portray Infineon’s OPTIMOS 3 family of high-efficiency power MOSFETS as a spanking-new product, it was actually introduced in 2006. That said, it’s had some recent improvements in packaging and new devices added to its roster that make a quick re-visit worthwhile if you’re looking to cut the power losses and cooling requirements in your next high-powered buck converter design.
These smaller, cooler-running devices have several unique features tailored for improving efficiency of high-powered buck converters. They use a variant of standard trenchMOS technology to reduce their RDS(on) for a given area (1.6 mΩ in their SuperS package ). This helps them deliver a very good Figure of Merit (RDS(on) * Gate Charge) -- an important value for determining the performance of the low-side device in a buck converter. Infineon has a white paper on how RDS(on) and Figure of Merit affect performance. The smaller die size also translates to lower gate capacitance and lower overall device capacitance, allowing them to run at higher frequencies with fewer switching losses and reducing drive power requirements.
As with the earlier devices, their smaller die size and lower thermal dissipation allow them to enjoy a small footprint that enables higher power density on a PCB. The belly side of the package is thermally-enhanced with a thermally-conductive drain connection that simplifies mounting and manufacturing.
These incremental but significant improvements will make it easier for your next design to support the emerging Green Grid energy efficiency requirements and other green power specifications that are beginning to take hold worldwide. Target applications include point-of-load regulators in computers but Infineon says that these hearty MOSFETS are also enjoying lots of use in point-of-load conversion in telecom and industrial equipment.
The new OptiMOS 3 30-V power MOSFET family will be available in eight package types, with over 80 devices differing in RDS(on). OptiMOS 3 is available now in high-volume quantities. For example, the best-in-class BSC016N03LSG, with RDS(on) of 1.6 mΩ, is available in a SSO-8 package at a 10-k piece. The price of a 3.5 mΩ device is less than $0.70.
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