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highpowerZONE Products for the week of August 4, 2008
STMicroelectronics Says…
STV250N55F3: 250 A Power MOSFET Combines Package and Process Advances for Higher Motor-Drive Efficiency
First discrete power MOSFET to combine ribbon bonding with surface-mount power package delivers 1.5 mΩ on-resistance with high current handling for 55 V applications
Taking aim at reduced operating costs and lowering the environmental footprint in applications such as electric vehicles, STMicroelectronics, a world leader in power applications, has introduced a 250A surface-mount power MOSFET with the lowest on-resistance in the market, to minimize energy conversion losses and enable higher performance.
The new device, the STV250N55F3, is the first power MOSFET to combine ST’s PowerSO-10 package with ribbon bonding to achieve ultra-low die-free package resistance. Implemented in ST’s high-density STripFET III fabrication process, the device offers a typical on-resistance of 1.5 milliohms. Further benefits of STripFET III include low switching losses and rugged avalanche characteristics. The nine-lead source connection also reduces on-resistance, in addition to aiding heat dissipation. Overall, the package is rated for 300W dissipation at 25 degrees C.
The high current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs. Standard driving thresholds also simplify driver-circuit design. The STV250N55F3 is rated for applications up to 55V.
EN-Genius Says…
If anybody had suggested to me forty years ago that a semiconductor could handle 250 A, I would have been bent over in stitches from laughing. If anybody had suggested it even ten years ago I would have been extremely doubtful. But, here we are…
The incentive for high current dc operation is being driven mainly by the desire to get back to dc power distribution. Edison lost the current wars to Westinghouse but it increasingly looks like the transmission losses of dc compared to the transformer losses of ac are going to prove Edison was right. For that to happen we are going to need some huge devices, and parts like the STV250N55F3 are a part of the future story.
The STV250N55F3 is an n-channel 55-V rated enhancement-mode power MOSFET using STM’s STripFET architecture, which is a single size feature strip technique that is highly manufacturable and repeatable.
The absolute maximum drain current rating of the part is 250 A at 25ºC derated to 175 A at 100ºC, and with a pulse rating (with the pulse width limited by the safe operating area) of 1000 A. The total permissible dissipation at 25ºC is 300 W, derated by 2.0 W/ºC.
The total gate charge is only 100 nC with a gate threshold voltage between 2 V and 4 V and a static drain-source on-resistance of a typical 1.5 mΩ (Vgs = 10 V, Id = 75 A). The source-drain diode has a forward on-voltage of 1.5 V and a reverse recovery time of 60 ns.
In the powerSO-10 the metal base of the package is the drain connection, pin 1 is the gate and pins 2 through 10 are the source connections.
Parts are being 100% avalanche tested at both wafer and finished product steps. The part is operable (and can be stored) over the range of -55ºC to +175ºC and will be eligible for automotive grade certification.
This part is extremely suited to high current traction solutions like wheelchairs and industrial vehicles. It is going to do extremely well and the technology success will push the achievable goalposts even further out.
The STV250N55F3 is sampling in, as noted, STM’s PowerSO-10. Volume production is scheduled for Q3 of 2008 when pricing will be $2.50 for 10-k piece lots.
Data Sheet
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