highpowerZONE Products for the week of September 3, 2007

ON Semiconductor Says...

NUS3116: Charging and Power Switching Solution for Portable Charging
Reduces Required Board Space For Small Form Factor Portables

ON Semiconductor, a global supplier of efficient power management solutions, introduced the NUS3116, an integrated charging and power switching circuit for small form factor portable electronics like cellular phones. This circuit combines a main battery switch, wall charging switch, and USB charging switch elements into a single component, optimizing charging performance and saving critical space on circuit boards in handheld electronic devices.

The NUS3116is an integration of main power switch, −12 volt (V), −6.2 amps (A), μCool single P−channel MOSFET to handle the main battery switch function and two internal low saturation PNP transistors to handle dual ) maximum RDS(ON), thechannel charging elements. With 40 mili ohm (m main switch MOSFET minimizes power loss during battery operation of portable electronics. The dual low-Vce(sat) transistors provide good thermal performance for charge currents up to 2 A, and have a Vce voltage drop of less than 240 mili volts (mV) at the end of the charging.

EN-Genius Says...

There are a number of integrated solutions out there for alternate USB/wall-wart battery charging options, but they are all "smarter" than the NUS3116MT wth charge control systems added in different flavors. The truth of the matter is that there is such a demand for cost savings that many manufacturers are still winging it in this portable markets.

This new part is really a way for an OEM to avoid buying three separate parts, probably in TSOP-6s -- because of the currents involved -- while intergating those three parts puts them into just 9 mm² of board area. It consists of a power MOSFET and two transistors.

The MOSFET has a Id maximum of -6.2 A and a Vdss of -12 V. It shows a typical Rds(on) of 32 mΩ at a Vgs of -4.5 V (Id of -3.0 A) and 44 mΩ at Vgs of -2.5 A. The typical forward transconductance of 5.9 S at a Vds of -16 V.

The two p-channel transistors are identical with maximum ratings of Vceo at -30 V; Vcbo at -30 V, Vebo at -8.0 V; Ic (continuous) is -2.0 A and -6.0 A (pulsed with a pulse width of 1 ms).

All the electrodes of the devices are available on external pins of the package, allowing for designer flexibility in completing the control circuits and add-on features.

A clean budget-priced part for those who want to continue to do things their own way but using a low profile device. Volumes will be huge.

The NUS3116 is in production in WDFN-8 priced at $0.80 in 3000-piece lots.

Data Sheet